MALVERN, Pa. & SHANGHAI, China — Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new 80 V TrenchFET® Gen IV N-channel power MOSFET that combines advanced on-resistance with a bondless wire (BWL) package to improve efficiency in industrial applications.

The SiEH4800EW offers an on-resistance 15 % lower than comparable devices in the same footprint, while its thermal resistance from junction to case (RthJC) is 18 % lower. With a typical on-resistance of 0.88 mΩ at 10 V, the device minimizes conduction losses to increase efficiency. Its maximum RthJC is as low as 0.36 °C/W, enhancing thermal performance.

The space-saving component measures 8 mm by 8 mm with a profile of just 1 mm, reducing PCB space by 50 % compared to MOSFETs in TO-263 packages. The SiEH4800EW features a fused leadframe that increases the solderable area of the source pad to 3.35 mm² — four times larger than traditional PIN packages. This reduces current density between the MOSFET and the PCB, lowering the risk of electromigration for more robust designs. Solderable side wings enhance solderability and facilitate visual inspection of solder joints.

This MOSFET is ideal for synchronous rectification and ORing applications. Typical uses include motor drive controllers, power tools, welding equipment, plasma cutters, battery management systems (BMS), robotics, and 3D printers. The device is rated for operation at high temperatures up to +175 °C, and its BWL construction minimizes parasitic inductance while maximizing current carrying capacity.